Product Code : ST-Cu/Ge-5N-Cu
A copper germanium (Cu/Ge) sputtering target is a material used in the process of thin-film deposition for electronic devices and semiconductor manufacturing. The target is made of a mixture of copper and germanium and is designed to be bombarded with high-energy particles during the sputtering process.
During the sputtering process, the target is placed in a vacuum chamber, where it is bombarded by high-energy particles such as ions. This creates a plasma that dislodges metal atoms from the surface of the target. These atoms then deposit onto a substrate, forming a thin film. This process is used in the production of various electronic devices, including solar cells, computer chips, and optical components.
Cu/Ge sputtering targets are popular because they offer high thermal stability, good electrical conductivity, and excellent adhesion to substrates. Copper is highly conductive, while germanium provides a semiconductor material that can be used to form junctions. This combination results in a material that offers both electrical conductivity and the ability to control electronic properties.
The ratio of copper to germanium in the target can be adjusted to achieve various properties, such as electrical resistivity, crystalline structure, and thermal expansion. The targets can be produced using various manufacturing methods such as casting, hot isostatic pressing, and powder metallurgy, depending on the requirements.
In conclusion, Cu/Ge sputtering targets are valuable materials in semiconductor manufacturing, enabling the development of advanced electronic devices and technologies.
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Product Information
A copper germanium (Cu/Ge) sputtering target is a material used in the process of thin-film deposition for electronic devices and semiconductor manufacturing. The target is made of a mixture of copper and germanium and is designed to be bombarded with high-energy particles during the sputtering process.
During the sputtering process, the target is placed in a vacuum chamber, where it is bombarded by high-energy particles such as ions. This creates a plasma that dislodges metal atoms from the surface of the target. These atoms then deposit onto a substrate, forming a thin film. This process is used in the production of various electronic devices, including solar cells, computer chips, and optical components.
Cu/Ge sputtering targets are popular because they offer high thermal stability, good electrical conductivity, and excellent adhesion to substrates. Copper is highly conductive, while germanium provides a semiconductor material that can be used to form junctions. This combination results in a material that offers both electrical conductivity and the ability to control electronic properties.
The ratio of copper to germanium in the target can be adjusted to achieve various properties, such as electrical resistivity, crystalline structure, and thermal expansion. The targets can be produced using various manufacturing methods such as casting, hot isostatic pressing, and powder metallurgy, depending on the requirements.
In conclusion, Cu/Ge sputtering targets are valuable materials in semiconductor manufacturing, enabling the development of advanced electronic devices and technologies.
Chemical Formula:Cu/Ge
Synonyms
Copper germanium alloy (88-12), Cu88Ge12, Cu90Ge10, Cu95Ge5, Cu:Ge 90:10, 95:5, GeCu
Copper Germanium (Cu/Ge) Sputtering Target Specification
Shape: Disc/Rectangular/Tube
Bonding: Unbonding/Bonding
Per your request or drawing
We can customized as required
Size：
| Circular Sputtering Targets | Diameter | 1.0”2.0”3.0”4.0”5.0”6.0”up to 21” |
| Rectangular Sputtering Targets | Width x Length | 5” x 12”5” x 15”5” x 20”5” x 22”6” x 20” |
| Thickness | 0.125”, 0.25” | |
Properties（Theoretical）
| Compound Formula | CuGe |
| Molecular Weight | 136.176 g/mol |
| Appearance | Metallic target |
| Melting Point | N/A |
| Boiling Point | N/A |
| Density | N/A |
| Solubility in H2O | N/A |
| Monoisotopic Mass | 136.851 g/mol |
Sputtering Targets Requirements
General requirements such as size, flatness, purity, impurity content, density, N/O/C/S, grain size, and defect control. Special requirements include surface roughness, resistance value, grain size uniformity, composition and tissue uniformity, magnetic conductivity, ultra-high density, ultra-fine grains, etc.
Application of Copper Germanium (Cu/Ge) Sputtering Target
Copper Germanium (Cu/Ge) Sputtering Target is mainly used in the electronics and information industry, glass coating field, wear-resistant materials, high-temperature corrosion resistance, high-grade decorative goods, and other industries.
Packing of Copper Germanium (Cu/Ge) Sputtering Target
Standard Packing:
Typical bulk packaging includes palletized plastic 5 gallon/25 kg. pails, fiber and steel drums to 1 ton super sacks in full container (FCL) or truck load (T/L) quantities. Research and sample quantities and hygroscopic, oxidizing or other air sensitive materials may be packaged under argon or vacuum. Solutions are packaged in polypropylene, plastic or glass jars up to palletized 440 gallon liquid totes Special package is available on request.
ATTs Copper Germanium (Cu/Ge) Sputtering Target is carefully handled to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
Chemical Identifiers
| Linear Formula | Cu-Ge |
| MDL Number | N/A |
| EC No. | N/A |
| Pubchem CID | 22321433 |
| IUPAC Name | copper; germanium |
| SMILES | [Cu+2].[Ge] |
| InchI Identifier | InChI=1S/Cu.Ge/q+2; |
| InchI Key | KJKVWMAUSLLETH-UHFFFAOYSA-N |
